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SK Hynix

Companies/South Korea  •  Curated by Admin Timeline.sg

Corporate timeline of SK Hynix, tracing its founding as Hyundai Electronics in 1983, key product breakthroughs, mergers and acquisitions, financial restructuring, and rise as a global semiconductor leader under SK Group.

Chronological Storyline (44 Milestones)

1983 CE

Hyundai Electronics Founded

Hyundai Electronics Industries Co., Ltd. is established as a subsidiary of Hyundai Group to enter the semiconductor business. #semiconductors #history

Hyundai Electronics Founded
Hyundai Electronics Founded
By SK Hynix Inc. - Own work using: 2017 Sustainability Report. Color from website logo., Public domain, https://commons.wikimedia.org/w/index.php?curid=61520207
1984 CE

First DRAM Production

Hyundai Electronics begins production of 64Kb DRAM, marking its entry into memory chip manufacturing. #technology #semiconductors

1987 CE

256Kb DRAM Development

The company develops and starts mass-producing 256Kb DRAM, enhancing its competitiveness in the memory market. #semiconductors #innovation

1990 CE

1Mb DRAM Mass Production

Hyundai Electronics begins mass production of 1Mb DRAM, solidifying its position in the global semiconductor industry. #technology #memory

1992 CE

4Mb DRAM Development

Development and production of 4Mb DRAM, advancing node technology and increasing memory density. #semiconductors #research

1994 CE

16Mb DRAM Launched

Hyundai Electronics launches 16Mb DRAM, becoming one of the first companies to produce this generation of memory chips. #innovation #memory

1996 CE

Listed on Korea Stock Exchange

Hyundai Electronics goes public on the Korea Stock Exchange, raising capital for expansion and R&D. #finance #business

1998 CE

64Mb DRAM Production

Mass production of 64Mb DRAM begins, achieving higher density for personal computer and server applications. #semiconductors #technology

1999 CE

Merger with LG Semiconductor

Hyundai Electronics merges with LG Semiconductor, forming a larger entity to compete globally. #mergers #acquisitions

2000 CE

128Mb DRAM Development

Development of 128Mb DRAM, pushing memory capacity for emerging computing needs. #technology #memory

2001 CE

Spin-off from Hyundai Group, Renamed Hynix

Hyundai Electronics spins off from Hyundai Group and changes its name to Hynix Semiconductor Inc., seeking independence. #corporate #restructuring

2002 CE

Financial Crisis and Debt Restructuring

Hynix faces severe financial difficulties due to the semiconductor downturn and undergoes a major debt restructuring program. #crisis #finance

2003 CE

256Mb DRAM Mass Production

Hynix begins mass production of 256Mb DRAM, maintaining competitiveness in the memory market. #semiconductors #production

2004 CE

Citigroup-led Consortium Acquires Control

A consortium led by Citigroup acquires a controlling stake in Hynix, injecting capital and stabilizing ownership. #acquisition #finance

2005 CE

512Mb DRAM Development

Development of 512Mb DRAM, doubling memory density for advanced computing. #innovation #memory

2005 CE

Acquisition of MtekVision

Hynix acquires MtekVision, a fabless semiconductor company, expanding into image sensor technology. #mergers #technology

2006 CE

60nm DRAM Technology

Hynix develops 60nm DRAM process technology, improving power efficiency and performance. #semiconductors #research

2007 CE

54nm DRAM Development

Next-generation 54nm DRAM process developed, continuing technology scaling. #technology #memory

2008 CE

Global Financial Crisis Impact

Hynix suffers from the global financial crisis, leading to a drop in memory prices and another round of restructuring. #crisis #economics

2009 CE

48nm Flash Memory Development

Hynix develops 48nm NAND flash memory, expanding its non-volatile memory portfolio. #flash #memory

2010 CE

SK Telecom Acquires 21% Stake

SK Telecom purchases a 21% stake in Hynix, leading to a strategic partnership and eventual name change. #acquisition #telecommunications

2011 CE

Renamed SK Hynix

Hynix Semiconductor is officially renamed SK Hynix after SK Group's acquisition, integrating into the SK conglomerate. #corporate #rebranding

2011 CE

21nm NAND Flash Development

SK Hynix develops 21nm NAND flash, leading the industry in process technology for memory. #technology #innovation

2012 CE

30nm DRAM Mass Production

SK Hynix begins mass production of 30nm-class DRAM, achieving higher performance and lower power consumption. #semiconductors #production

2013 CE

Acquisition of Link_A_Media Devices

SK Hynix acquires Link_A_Media Devices, adding NAND controller technology to its portfolio. #mergers #acquisitions

2013 CE

20nm DRAM Development

Development of 20nm DRAM process, enabling higher density and reduced costs. #technology #memory

2014 CE

Acquisition of Silicon Mitus

SK Hynix acquires Silicon Mitus, a fabless power management IC company, to diversify its product line. #acquisition #technology

2015 CE

18nm DRAM Development

SK Hynix develops 18nm DRAM, further scaling memory technology for advanced applications. #innovation #semiconductors

2015 CE

48-Layer 3D NAND First Generation

SK Hynix introduces its first generation 48-layer 3D NAND flash, boosting storage density and performance. #technology #flash

2016 CE

10nm-Class DRAM (1x nm)

SK Hynix develops 1x nm (10nm-class) DRAM, marking a significant milestone in memory scaling. #semiconductors #research

2017 CE

72-Layer 3D NAND Development

SK Hynix develops 72-layer 3D NAND, increasing storage capacity and speed for enterprise SSDs. #technology #memory

2018 CE

96-Layer 3D NAND Unveiled

SK Hynix unveils 96-layer 3D NAND flash memory, improving performance and cost efficiency for data centers. #innovation #flash

2018 CE

2Ynm DRAM Mass Production

SK Hynix starts mass production of 2Ynm (second-generation 10nm-class) DRAM, enhancing performance. #semiconductors #production

2019 CE

Acquisition of Intel NAND Business Announced

SK Hynix announces the acquisition of Intel's NAND flash and SSD business for $9 billion, expanding its market share. #mergers #acquisitions

2019 CE

128-Layer 3D NAND Development

SK Hynix develops 128-layer 3D NAND, pushing the limits of vertical stacking for advanced storage. #technology #innovation

2020 CE

176-Layer 3D NAND Mass Production

SK Hynix begins mass production of 176-layer 3D NAND, setting a new industry record for layer count. #technology #production

2020 CE

HBM2E DRAM Development

SK Hynix develops High Bandwidth Memory (HBM2E) DRAM, targeting high-performance computing and AI. #memory #AI

2021 CE

HBM3 DRAM Development

SK Hynix develops HBM3 DRAM, achieving higher bandwidth and capacity for next-gen AI accelerators. #technology #innovation

2021 CE

Completion of Intel NAND Acquisition

SK Hynix completes the acquisition of Intel's NAND and SSD business, forming Solidigm subsidiary. #acquisition #business

2022 CE

DDR5 DRAM Mass Production

SK Hynix begins mass production of DDR5 DRAM, the latest standard for high-performance computing. #semiconductors #memory

2022 CE

238-Layer 3D NAND Development

SK Hynix announces development of 238-layer 3D NAND, the industry's highest layer count at the time. #technology #innovation

2023 CE

HBM3E DRAM Development

SK Hynix develops HBM3E DRAM, an enhanced version of HBM3 for AI workloads. #memory #AI

2023 CE

1b nm DRAM (5th Gen 10nm Class)

SK Hynix develops 1b nm (fifth-generation 10nm-class) DRAM, improving performance and power efficiency. #semiconductors #research

2024 CE

Advanced Packaging Facility in Indiana

SK Hynix announces plans to build a $3.87 billion advanced packaging facility in Indiana, USA. #expansion #manufacturing