This timeline traces the evolution of semiconductor lithography from its early origins to the modern era, highlighting key innovations, pivotal figures, and the rise of TSMC as a global foundry leader. It covers the foundational inventions, process node breakthroughs, and the development of advanced lithography technologies like EUV.
John Bardeen, Walter Brattain, and William Shockley at Bell Labs demonstrate the first point-contact transistor, laying the foundation for modern electronics. #transistor #electronics
William Shockley invents the junction transistor, which is more practical for mass production. #transistor #semiconductor
Researchers at Bell Labs and other institutions develop photolithography techniques to pattern transistor features on semiconductor wafers. #lithography #semiconductor
Jack Kilby at Texas Instruments demonstrates the first integrated circuit, merging multiple transistors on a single germanium chip. #IC #integratedcircuit
Robert Noyce at Fairchild Semiconductor patents a planar IC using silicon, enabling mass production. #IC #silicon
Fairchild Semiconductor releases the first commercial IC, the F101, using photolithography. #IC #lithography
Frank Wanlass at Fairchild invents complementary metal-oxide-semiconductor (CMOS) logic, which later dominates low-power chip design. #CMOS #logic
Gordon Moore observes that transistor density doubles every two years, predicting the pace of semiconductor advancement. #MooresLaw #semiconductor
Robert Noyce and Gordon Moore found Intel, which becomes a leader in memory and microprocessor chips. #Intel #semiconductor
Intel releases the 4004, the first commercial microprocessor, with 2,300 transistors using 10 µm lithography. #microprocessor #Intel
Perkin-Elmer introduces the Micralign projection mask aligner, improving resolution over contact printing. #lithography #projection
GCA Corporation develops the first commercial wafer stepper (DSW 4800), enabling finer patterns. #lithography #stepper )
Hitachi and others produce 64K DRAM chips using advanced lithography, pushing design rules below 2 µm. #DRAM #memory
ASML (Advanced Semiconductor Materials Lithography) is established in the Netherlands, later becoming the dominant lithography equipment supplier. #ASML #lithography
The Taiwanese government initiates the construction of TSMC's first fab in Hsinchu Science Park. #TSMC #foundry
Morris Chang establishes Taiwan Semiconductor Manufacturing Company, the world's first dedicated semiconductor foundry. #TSMC #MorrisChang
TSMC's Fab 2 begins production, offering CMOS processes for logic chips. #TSMC #fab
Nikon and Canon ship i-line (365 nm) steppers, enabling mass production of 0.5 µm devices. #lithography #i-line
Intel launches the Pentium with 0.8 µm lithography, containing 3.1 million transistors. #Intel #Pentium
TSMC becomes publicly traded on the New York Stock Exchange, raising capital for expansion. #TSMC #IPO
IBM unveils copper wiring instead of aluminum, reducing resistance and allowing faster chips. #copper #interconnect
TSMC and others achieve 0.18 µm lithography, enabling copper interconnects and higher performance. #lithography #node
ASML, Intel, and others invest in extreme ultraviolet (EUV) lithography for future nodes. #EUV #lithography
Intel introduces strained silicon at the 90 nm node, enhancing transistor performance. #strainedsilicon #90nm
TSMC surpasses competitors in revenue and capacity, solidifying its leadership. #TSMC #foundry
TSMC and Intel begin volume production at 65 nm with improved power efficiency. #65nm #lithography
Intel introduces high-k dielectric and metal gate at 45 nm, reducing leakage. #highk #45nm
TSMC and Intel ship 32 nm processors, continuing Moore's Law. #32nm #semiconductor
ASML delivers the NXE:3100, a prototype EUV lithography system, for early development. #EUV #ASML
TSMC ramps 28 nm process, widely adopted by major chip designers for its performance and power balance. #28nm #TSMC
TSMC begins development of the 20 nm process, using planar transistors. #20nm #lithography
TSMC's 16 nm FinFET process delivers significant power and performance gains over planar transistors. #FinFET #16nm
TSMC begins volume production of the 10 nm node, used in Apple A10X and Huawei Kirin 970. #10nm #TSMC
ASML ships the NXE:3300, a production-ready EUV scanner, to leading chipmakers. #EUV #ASML
TSMC's 7 nm node enables chips like Apple A12 and AMD Zen 2, with EUV used in later versions. #7nm #TSMC
TSMC starts mass production of the 5 nm node (N5), used in Apple A14 and M1 chips. #5nm #TSMC
TSMC announces plans to build a 5 nm fab in Arizona, USA, to diversify global chip supply. #TSMC #Arizona
TSMC starts commercial production of the 3 nm node (N3), used in Apple A17 and M3 chips. #3nm #TSMC
TSMC reveals its 2 nm (N2) process with nanosheet transistors, targeting production in 2025. #2nm #TSMC
ASML ships the first high-NA EUV (0.55 NA) system to Intel, enabling sub-2 nm patterning. #HighNA #EUV